Datasheet4U Logo Datasheet4U.com

NTMFS10N7D2C - N-Channel MOSFET

General Description

This N

Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology.

in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 23.4 mW at VGS = 6 V, ID = 14 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Other Datasheets by onsemi

Part Number Description
NTMFS10N3D2C N-Channel MOSFET
NTMFS002P03P8Z P-Channel Power MOSFET
NTMFS003P03P8Z P-Channel MOSFET
NTMFS005N10MCL N-Channel Power MOSFET
NTMFS005P03P8Z P-Channel Power MOSFET
NTMFS008N12MC N-Channel Power MOSFET
NTMFS011N15MC 150V 78A N-Channel Power MOSFET
NTMFS015N15MC N-Channel MOSFET
NTMFS016N06C N-Channel Power MOSFET
NTMFS020N06C N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Power Trench, N-Channel, Shielded Gate 100 V, 78 A, 7.2 mW NTMFS10N7D2C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features  Shielded Gate MOSFET Technology  Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A  Max rDS(on) = 23.